Space-charge-effect-induced large magnetoresistance in silicon
نویسندگان
چکیده
We report that silicon shows large positive magnetoresistance (MR) between 0 and 3 T more than 1,000 per cent at 300 K and 3,000 per cent at 25 K. The experiment on lightly doped silicon reveals that when the carrier density decreases below 10 cm the MR becomes pronounced due to the space-charge effect. We propose that the quasi-neutrality breaking of the space-charge effect can introduce electric field inhomogeneity, similar to the situation in other semiconductors where the non-saturating positive MR was observed. We have realized a magnetoresistive device that works at room temperature with simpler structure in a way different from other known metal-semiconductor hybrid devices.
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تاریخ انتشار 2009